Published April 1990 | Version v1
Journal article Metadata-only

Current-voltage characteristics of thin film and bulk diamond treated in hydrogen plasma

Creators

  • 1. Dept. of Electrical and Computer Engineering, Old Dominion Univ., Norfolk, VA (USA)

Description

It is shown that the electrical properties of thin film and bulk diamond can be systematically altered by hydrogen plasma treatment under controlled conditions. The concentration of electrically active hydrogen introduced in diamond can be determined from the current-voltage characteristics of hydrogenated samples containing traps. Hydrogen passivation of deep traps in diamond is clearly demonstrated

Additional details

Publishing Information

Journal Title
IEEE Electron Device Letters
Journal Volume
11
Journal Issue
4
Series
IEEE Electron Device Lett.
Journal Page Range
159-161
ISSN
0741-3106
CODEN
EDLED

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
21078498
Subject category
S36: MATERIALS SCIENCE; S74: ATOMIC AND MOLECULAR PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
BEAM-PLASMA SYSTEMS; CONTROL; CURRENT DENSITY; DIAMONDS; ELECTRICAL PROPERTIES; HYDROGEN; PASSIVATION; THIN FILMS; TRAPPED ELECTRONS
Descriptors DEC
CARBON; ELECTRONS; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; FILMS; LEPTONS; MINERALS; NONMETALS; PHYSICAL PROPERTIES