Two-component simulation for molecular beam epitaxy growth of GaAs

Presented is a two-component simulation for molecular beam epitaxy growth of GaAs. The key aspects of the simulation are the high surface mobility of one component (Ga) and the inclusion of a second, volatile component (As). Simulations show how the interplay of the substrate temperature and As overpressure determines the supersaturation, and therefore whether the growth occurs in the kinetically limited or near-equilibrium regime. Qualitative comparisons of the simulations and experiment are presented