Transport mechanism in bulk amorphous Ge20Se80-xBix system
Creators
- 1. International Centre for Theoretical Physics, Trieste (Italy)
- 2. Delhi Univ. (India). Dept. of Physics and Astrophysics
Description
Bismuth doping on bulk amorphous Ge20Se80-xBix system has been shown to produce drastic change in the electrical conductivity which has been found to be intrinsic in the entire range of measurement (80-300 K). Results of Thermoelectric Power (TEP) reveal a transition from p-type conduction for Bi (x=9 atomic percent). The important feature of TEP is its feeble temperature dependence as compared to conductivity (data) indication of thermally activated mobility. Out of various theoretical models the present data fits very well with two channel model proposed by Negel. The present analysis not only explains the discrepancies in the dc conductivity and TEP data but also provides the evidence for the existence of small tail of localised states at the band edges. (author). 11 refs, 4 figs, 1 tab
Availability note (English)
MF available from INIS under the Report Number.Files
22050296.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 19 p.
- Report number
- IC--90/365
INIS
- Country of Publication
- International Atomic Energy Agency (IAEA)
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 22050296
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMORPHOUS STATE; BISMUTH; BISMUTH COMPOUNDS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; GERMANIUM COMPOUNDS; SELENIUM COMPOUNDS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELEMENTS; MATERIALS; METALS; PHYSICAL PROPERTIES