Evolution of photoluminescence of porous silicon at simultaneous thermal and laser action

Study on impact of heating and ultraviolet irradiations of porous silicon (PS) on its photoluminescence kinetics is carried out. The dependencies of the PS photoluminescence intensity on the irradiation time and heating temperature are presented. The system of differential equations, describing the change in saturated bond concentrations is presented. Calculations of numerical constants values of photochemical reactions velocities are carried out and their activation energies are determined