Published October 12, 1997
| Version v1
Journal article
On temperature dependence of ion yield in electron stimulated desorption
Creators
- 1. Fiziko-Tekhnicheskij Inst. im. A.F. Ioffe RAN, Sankt-Peterburg (Russian Federation)
Description
Analytical expression for the temperature coefficient of yield of ions, desorbed by reverse mechanism, was obtained in the framework of relaxation model of electron stimulated desorption. Thermal oscillations of adsorbed atoms with temperature dependent amplitude, were considered. Results of calculation, performed for desorption of Na+ ions from silicon monolayer surface, precipitated on tungsten substrate, correspond satisfactorily with the experiment
Additional details
Additional titles
- Original title (Russian)
- О температурной зависимости выхода ионов при электронно-стимулированной десорбции
Publishing Information
- Journal Title
- Pis'ma v Zhurnal Tekhnicheskoj Fiziki
- Journal Volume
- 23
- Journal Issue
- 19
- Journal Page Range
- p. 90-94
- ISSN
- 0320-0116
- CODEN
- PZTFDD
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 30015852
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANALYTICAL SOLUTION; DESORPTION; ELECTRONS; PHYSICAL RADIATION EFFECTS; SILICON; SODIUM IONS; SURFACE IONIZATION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- CHARGED PARTICLES; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; IONIZATION; IONS; LEPTONS; RADIATION EFFECTS; SEMIMETALS; TEMPERATURE RANGE
Optional Information
- Notes
- 14 refs.