Published September 2004
| Version v1
Journal article
Annealing effect on the cathodoluminescence of ZnO:Ga epitaxial layers implanted with N
- 1. RAN, Inst. Problem Tekhnologii Mikroehlektroniki, Chernogolovka (Russian Federation)
- 2. MGU im. M.V. Lomonosova, Fizicheskij Fakul'tet, Moscow (Russian Federation)
- 3. MGU im. M.V. Lomonosova, Khimicheskij Fakul'tet, Moscow (Russian Federation)
Description
The studies on the annealing effect on the ZnO:Ga- + N+/Al2O3 films cathodoluminescence are carried out. It is shown, that the annealing leads to the increase in the edge line and to origination of the donor-acceptor recombination with the maximum at 400 nm, indicating the donor-acceptor centers formation
Abstract (Russian)
Проведены исследования влияния отжига на катодолюминесценцию пленок ZnO:Ga- + N+/Al2O3. Показано, что отжиг приводит к увеличению интенсивности краевой линии и появлению полосы донорно-акцепторной рекомбинации с максимумом при 400 нм, свидетельствующей об образовании донорно-акцепторных центровAdditional details
Additional titles
- Original title (Russian)
- Влияние отжига на катодолуминесценцию эпитаксиальных слоев ZnO:Га, имплантированных азотом
Publishing Information
- Journal Title
- Izvestiya Akademii Nauk. Rossijskaya Akademiya Nauk. Seriya Fizicheskaya
- Journal Volume
- 68
- Journal Issue
- 9
- Journal Page Range
- p. 1374-1376
- ISSN
- 1026-3489
- CODEN
- IRAFEO
Conference
- Title
- SEM-2003 Symposium
- Original Conference Title
- XIII Rossijskij simpozium po rastrovoj ehlektronnoj microskopii i analiticheskim metodam issledovaniya tverdykh tel
- Dates
- May 2003
- Place
- Chernogolovka (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 36110662
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CATHODOLUMINESCENCE; EMISSION SPECTRA; EPITAXY; FILMS; GALLIUM ADDITIONS; ION IMPLANTATION; NITROGEN IONS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; ZINC OXIDES
- Descriptors DEC
- ALLOYS; CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL GROWTH METHODS; EMISSION; GALLIUM ALLOYS; HEAT TREATMENTS; IONS; LUMINESCENCE; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; SPECTRA; TEMPERATURE RANGE; ZINC COMPOUNDS
Optional Information
- Notes
- 6 refs.; 5 figs.