Influence of electron irradiation on current-voltage characteristics of TlGaS2 single crystals

Full text : Single crystals of the TlGaS2 compound belong to the class of wide-band-gap semiconductors with a layered structure and a high sensitivity to electromagnetic radiation in the visible spectral range. These crystals are perspective for practical application as radians and detectors of optical radiation, detectors of powerful laser radiation, non-linear optical transformers, etc. TlGaS2 samples for measurements were obtained from massive single crystal by splitting along C axis of the natural cleavage and were 200 μm thick. The TlGaS2 samples form flat capacitors with plane perpendicular to the crystal C-axis. The capacitor plate area was 3.10-2 cm2. The ohmic contacts of samples were made using Ag paste. First of all current-voltage characteristics of initial crystal at room temperature were studied and then sample is radiated by electron stream. The electron radiation of samples were made by accelerator ELA (electron line accelerator) with minimal energy of electrons 4 MeV at current 2 mk A. Dose of radiation was De=2.1012e/cm2, De=8.1013e/cm2 and De=4.1017e/cm2. Differences between electrophysical parameters of initial and radiated samples are not at dose radiation of De=8.1013e/cm2 initial.