Published September 1992 | Version v1
Journal article

Influence of ion channeling on backscattering and sputtering yields of niobium single crystals

  • 1. Inst. of Electronics, Bulgarian Academy of Sciences, Sofia (Bulgaria)
  • 2. Inst. of Metal Physics, Academy of Sciences of Ukraine, Kiev (Ukraine)

Description

The secondary ion yields from Nb(100) and Nb(111) crystals bombarded with 3-7 keV Ar ions at various azimuthal and polar angles of incidence are measured. The reductions of the sputtering yields due to channeling along the major planar and axial channels of the crystals are separated. The effect is found to depend on the channel orientation relative to the bombarded surface. The ion penetration is also simulated by using a MARLOWE based computer code. Although the calculated primary ion range is larger at channeling conditions, no substantial enhancement of the focusing effect or the depths of origin of sputtered particles is observed

Additional details

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B
Journal Volume
71
Journal Issue
4
Journal Page Range
p. 381-386.
ISSN
0168-583X
CODEN
NIMBEU