Published September 1992
| Version v1
Journal article
Influence of ion channeling on backscattering and sputtering yields of niobium single crystals
- 1. Inst. of Electronics, Bulgarian Academy of Sciences, Sofia (Bulgaria)
- 2. Inst. of Metal Physics, Academy of Sciences of Ukraine, Kiev (Ukraine)
Description
The secondary ion yields from Nb(100) and Nb(111) crystals bombarded with 3-7 keV Ar ions at various azimuthal and polar angles of incidence are measured. The reductions of the sputtering yields due to channeling along the major planar and axial channels of the crystals are separated. The effect is found to depend on the channel orientation relative to the bombarded surface. The ion penetration is also simulated by using a MARLOWE based computer code. Although the calculated primary ion range is larger at channeling conditions, no substantial enhancement of the focusing effect or the depths of origin of sputtered particles is observed
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B
- Journal Volume
- 71
- Journal Issue
- 4
- Journal Page Range
- p. 381-386.
- ISSN
- 0168-583X
- CODEN
- NIMBEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 24037296
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S73: NUCLEAR PHYSICS AND RADIATION PHYSICS;
- Descriptors DEI
- ANISOTROPY; ARGON IONS; BACKSCATTERING; COMPUTER CODES; COMPUTERIZED SIMULATION; ION BEAMS; ION CHANNELING; KEV RANGE 01-10; MONOCRYSTALS; NIOBIUM; SECONDARY EMISSION; SPUTTERING
- Descriptors DEC
- BEAMS; CHANNELING; CHARGED PARTICLES; CRYSTALS; ELEMENTS; EMISSION; ENERGY RANGE; IONS; KEV RANGE; METALS; SCATTERING; SIMULATION; TRANSITION ELEMENTS