Crystal orientation changes of Ag thin films on the Si(111) substrate due to tribo-assisted recrystallization

Crystal orientation changes of Ag thin films due to the tribo-assisted recrystallization have been studied using grazing incidence X-ray diffraction with synchrotron radiation. After preparation of an Si(111) √3 x √3-Ag surface, a 5-nm-thick Ag film was deposited on the surface at the substrate temperature of 303 K in an ultra-high vacuum chamber. The friction experiments were carried out using a diamond pin-on-plate type tribometer just after the Ag deposition in the same UHV chamber. We found that the coefficient of friction of the Ag films on the Si(111) √3 x √3-Ag surface decreases from 0.07 to 0.03, with increasing reciprocal sliding cycles. In synchronization with the coefficient change, Ag{100} grains are gradually disappearing. As a result, the Ag{111} grains cover the entire surface after 50 sliding cycles. Moreover, we found that the domain size of the Ag{111} grains increases with increasing reciprocal sliding cycles by measuring the rocking curve width. These results directly show that the Ag(111) plane is the sliding plane of friction and the coefficient of friction of Ag films is determined by the fraction of the Ag(111) grains in the Ag films. Moreover, to clarify the reaction between the Ag film and the Si substrate due to the tribo-assisted recrystallization, the substrate strain has been studied by an extremely asymmetric X-ray diffraction technique using synchrotron radiation