Published October 1976 | Version v1
Journal article Metadata-only

On the problem of γ-radiative defects in crucibleless high-resistance silicon

Creators

  • 1. AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.

Description

no abstract available

Additional details

Additional titles

Original title (Russian)
К вопросу о γ-радиационных дефектах в бестигельном высокоомном кремнии

Publishing Information

Journal Title
Fiz. Tekh. Poluprovodn.
Journal Volume
10
Journal Issue
10
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
2015

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
9348766
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
ANNEALING; GAMMA RADIATION; HIGH TEMPERATURE; MEDIUM TEMPERATURE; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; SEMICONDUCTOR DIODES; SILICON
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; IONIZING RADIATIONS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMIMETALS

Optional Information

Notes
Deposited article; for English translation see the journal Sov. Phys. - Semicond.