Properties of electrolyte and electrode films prepared by rf and dc magnetron sputtering
Creators
- 1. Solid State Div., Oak Ridge National Lab., Oak Ridge, TN (USA)
Description
Increased interest in ion conducting thin films and thin-film devices is discussed. Magnetically enhanced (magnetron) sputtering is an important technique for depositing these as well as other kinds of ceramic thin films. Two advantages of magnetron over conventional diode sputtering are the increased sputtering rate, which is important in the deposition of ceramic materials, and the reduction in electron bombardment of the substrate and growing film. In this paper, the authors describe high-vacuum film growth chamber and present the results of tests of this system in fabricating films of lithium ion conducting glass electrolytes, TiS2, and vanadium oxide by reactive dc and rf magnetron sputtering. The results of combining these films into a thin film lithium battery also are discussed
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (USA)
- ISBN
- 1-55899-008-9
- Imprint Title
- Solid state ionics
- Imprint Pagination
- 621 p.
- Series
- Materials Research Society symposium proceedings. Volume 135.
- Journal Page Range
- p. 143-148.
Conference
- Title
- Solid state ionics.
- Dates
- 28 Nov - 2 Dec 1988.
- Place
- Boston, MA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21066870
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CERAMICS; DEPOSITION; ELECTRIC BATTERIES; ELECTRODES; ELECTROLYTES; FABRICATION; GLASS; IONIC CONDUCTIVITY; SPUTTERING; THIN FILMS; TITANIUM SULFIDES; VANADIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ENERGY STORAGE SYSTEMS; FILMS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SULFIDES; SULFUR COMPOUNDS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-8811221--.