Published February 1996
| Version v1
Journal article
Defect properties in γ irradiated InP studied by positron annihilation
- 1. Wuhan Univ. (China). Dept. of Physics
Description
Three kinds of InP samples (N, P and SI type) with different carrier concentration were irradiated with γ rays, the doses we used were 0∼105 Gy. The positron lifetime spectra were measured before and after irradiation. With the increase of the doses, the positron average lifetime τav has small decreases or basically have no changes. The γ irradiation made defects' charge state changed or induced some new defects, but most of them have been annealed in room temperature. That means InP has a high radiation resistance
Additional details
Publishing Information
- Journal Title
- Journal of Wuhan University. Natural Science Edition
- Journal Volume
- 42
- Journal Issue
- 1
- Journal Page Range
- p. 83-86.
- ISSN
- 0253-9888
- CODEN
- WTHPDI
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 27052865
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNIHILATION; CHARGE STATES; CRYSTAL DEFECTS; DOSE-RESPONSE RELATIONSHIPS; GAMMA RADIATION; INDIUM PHOSPHIDES; IRRADIATION; LIFETIME; POSITRONS
- Descriptors DEC
- ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; FERMIONS; INDIUM COMPOUNDS; INTERACTIONS; IONIZING RADIATIONS; LEPTONS; MATTER; PARTICLE INTERACTIONS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATIONS