Strong interaction between graphene and localized hot spots in all-dielectric metasurfaces
Creators
- 1. Institute for Advanced Study, Nanchang University, Nanchang 330031 (China)
- 2. Laboratory of Millimeter Wave and Terahertz Technology, School of Physics and Electronics Information, Hubei University of Education, Wuhan 430205 (China)
- 3. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)
- 4. School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006 (China)
- 5. Center for Materials for Information Technology, The University of Alabama, Tuscaloosa, AL 35487 (United States)
Description
The active photonics based on the two-dimensional material graphene have attracted a great deal of interest for developing tunable and compact optical devices with high efficiency. Here, we integrate graphene into the Fano-resonant all-dielectric metasurfaces consisting of silicon split resonators, and systematically investigate the strong interaction between graphene and the highly localized hot spots inside feed gaps in the near infrared regime. The numerical results show that the integrated graphene can substantially reduce the Fano resonance due to the coupling effect between the intrinsic absorption of graphene with enhanced electric field in the localized hotspot. With the manipulation of the surface conductivity via varying Fermi level and the layer number of graphene, the Fano resonance strength obtains a significant modulation and is even switched off. This work provides a great degree of freedom to tailor light-matter interaction at the nanoscale and opens up avenues for actively tunable and integrated nanophotonic device applications, such as optical biosensing, slow light and enhanced nonlinear effects. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6463/ab28d5Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 52
- Journal Issue
- 38
- Journal Page Range
- [8 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52077094
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DIELECTRIC MATERIALS; FERMI LEVEL; GRAPHENE; NANOSTRUCTURES; RESONATORS
- Descriptors DEC
- CARBON; ELECTRONIC EQUIPMENT; ELEMENTS; ENERGY LEVELS; EQUIPMENT; MATERIALS; NONMETALS