Published November 16, 1983 | Version v1
Journal article Metadata-only

Curie temperature as a critical temperature for dielectric, galvanomagnetic, and photoelectric phenomena in strongly doped Pb/sub 1-x/Sn/sub x/Te

Creators

  • 1. Humboldt-Universitaet, Berlin (German Democratic Republic). Sektion Physik

Description

Critical temperatures of dielectric, galvanomagnetic and photoelectric properties of single crystal bulk samples and epitaxial layers of strongly doped Pb/sub 1-x/Sn/sub x/Te have been investigated by Hall effect and photoconductivity measurements. The Curie temperature was determined from the temperature dependent spontaneous voltage. It is concluded that the temperature dependences of above properties undergo changes at the ferroelectric Curie temperature. The critical temperatures of both Hall coefficient and electron concentration as well as electron lifetime agree quite well with the Curie temperature

Additional details

Publishing Information

Journal Title
Phys. Status Solidi A
Journal Volume
80
Journal Issue
1
Series
Phys. Status Solidi A.
Journal Page Range
K101-K104
ISSN
0031-8965

INIS

Country of Publication
Germany
Country of Input or Organization
German Democratic Republic
INIS RN
15030596
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CARRIER DENSITY; CRITICAL TEMPERATURE; CRYSTAL-PHASE TRANSFORMATIONS; CURIE POINT; DIELECTRIC PROPERTIES; DOPED MATERIALS; ELECTRIC POTENTIAL; FERMI LEVEL; GALLIUM COMPOUNDS; GALVANOMAGNETIC EFFECT; HALL EFFECT; INDIUM COMPOUNDS; LEAD TELLURIDES; PHOTOELECTRIC EFFECT; TEMPERATURE DEPENDENCE; TIN TELLURIDES
Descriptors DEC
CHALCOGENIDES; ELECTRICAL PROPERTIES; ENERGY LEVELS; LEAD COMPOUNDS; MATERIALS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS; THERMODYNAMIC PROPERTIES; TIN COMPOUNDS; TRANSITION TEMPERATURE

Optional Information

Notes
Short note.