The study of stress induced effects on Moessbauer impurities forming the kink in dislocation in some crystals

The alternating external stress value required to move a dislocation together with Moessbauer impurities positioned at dislocation is calculated by using the kink model. The kinetic energy of the dislocation is calculated which leads to an energy shift in the γ-ray photon emitted by the atom moving with the dislocation. The critical stress values calculated at low temperatures are found to change with the mass and the Debye temperatures of the resonating atoms. The variation of mean square displacement, mean square velocity and the first moments for the Moessbauer impurity at low temperature are also evaluated. All the results are compared with the corresponding values obtained by using the string model. (orig.)