Oblique-incidence sputtering of Ru intermediate layer for decoupling of intergranular exchange in perpendicular recording media
Creators
- 1. Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-05, Aoba, Aramaki, Aoba-ku, Sendai 980-8579 Japan (Japan)
- 2. Center for Nanobioengineering and Spintronics, Chungnam National University, 220, Gung-Dong, Yuseong-Gu., Daejeon, 305-764 (Korea, Republic of)
- 3. Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-05, Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan)
Description
During the Ru deposition process for granular type perpendicular magnetic recording media, both a reduction in the Ru intermediate layer thickness and lowering of sputtering gas pressure were successfully achieved by focusing on a self-shadowing effect. Oblique-incidence sputtering with a 60 deg. incident angle under an Ar gas pressure of 0.6 Pa yielded (1) columnar Ru grains with a growth direction of 30 deg. from the film normal, (2) c-plane sheet texture by epitaxial growth on the Pt underlayer, and (3) a flat envelope of the surface and a deep gap at grain boundaries. This change in the Ru structure significantly contributes to reducing exchange coupling among magnetic grains, especially in the initial growth region in an overlying granular medium.
Additional details
Identifiers
- DOI
- 10.1063/1.3562262;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 109
- Journal Issue
- 7
- Journal Page Range
- p. 07B753-07B753.3
- ISSN
- 0021-8979
- CODEN
- JAPIAU
Conference
- Title
- 55. annual conference on magnetism and magnetic materials
- Dates
- 14-18 Nov 2010
- Place
- Atlanta, GA (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43037650
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COUPLING; DECOUPLING; DEPOSITION; EPITAXY; FILMS; GRAIN BOUNDARIES; LAYERS; REDUCTION; RUTHENIUM; SPUTTERING; SURFACES; THICKNESS
- Descriptors DEC
- CHEMICAL REACTIONS; CRYSTAL GROWTH METHODS; DIMENSIONS; ELEMENTS; METALS; MICROSTRUCTURE; PLATINUM METALS; REFRACTORY METALS; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2011 American Institute of Physics