Published April 1, 2011 | Version v1
Journal article

Oblique-incidence sputtering of Ru intermediate layer for decoupling of intergranular exchange in perpendicular recording media

  • 1. Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-05, Aoba, Aramaki, Aoba-ku, Sendai 980-8579 Japan (Japan)
  • 2. Center for Nanobioengineering and Spintronics, Chungnam National University, 220, Gung-Dong, Yuseong-Gu., Daejeon, 305-764 (Korea, Republic of)
  • 3. Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-05, Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

Description

During the Ru deposition process for granular type perpendicular magnetic recording media, both a reduction in the Ru intermediate layer thickness and lowering of sputtering gas pressure were successfully achieved by focusing on a self-shadowing effect. Oblique-incidence sputtering with a 60 deg. incident angle under an Ar gas pressure of 0.6 Pa yielded (1) columnar Ru grains with a growth direction of 30 deg. from the film normal, (2) c-plane sheet texture by epitaxial growth on the Pt underlayer, and (3) a flat envelope of the surface and a deep gap at grain boundaries. This change in the Ru structure significantly contributes to reducing exchange coupling among magnetic grains, especially in the initial growth region in an overlying granular medium.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
109
Journal Issue
7
Journal Page Range
p. 07B753-07B753.3
ISSN
0021-8979
CODEN
JAPIAU

Conference

Title
55. annual conference on magnetism and magnetic materials
Dates
14-18 Nov 2010
Place
Atlanta, GA (United States)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43037650
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COUPLING; DECOUPLING; DEPOSITION; EPITAXY; FILMS; GRAIN BOUNDARIES; LAYERS; REDUCTION; RUTHENIUM; SPUTTERING; SURFACES; THICKNESS
Descriptors DEC
CHEMICAL REACTIONS; CRYSTAL GROWTH METHODS; DIMENSIONS; ELEMENTS; METALS; MICROSTRUCTURE; PLATINUM METALS; REFRACTORY METALS; TRANSITION ELEMENTS

Optional Information

Notes
(c) 2011 American Institute of Physics