Temperature-dependent depth profiles of deuterons implanted into zirconium

Depth profiles of 10-30 keV D+ incident on zirconium have been measured using the D(3He, α)1H reaction. The targets were implanted at temperatures from 50 to 500 K and at doses up to 2 x 1018 ions/cm2. Annealing studies were also carried out. After low-temperature implantation normal range distributions were observed. Above room temperature the implanted deuterons migrate to the surface and form a rectangular distribution with constant concentration. At even higher temperatures (above 400 K), the deuterons diffuse away from the near-surface region, wheras profiles annealed up to 500 K after implantation at 335 K remain stable. (Auth.)