Published December 15, 2004
| Version v1
Journal article
Properties of intrinsic di-interstitials in GaAs
Creators
- 1. Department of Energetics, University of Rome 'La Sapienza' and INFM, via A Scarpa 14-16, 00161 Rome (Italy)
- 2. COMP/Laboratory of Physics, Helsinki University of Technology, PO Box 1100, 02015 HUT (Finland)
Description
Recent studies have shown evidence of self-interstitial aggregation in ion-implanted Si, resulting in nanoscopic damage structures. Similarly, self-interstitial atoms are expected to play an important role for defect clustering in ion-implanted GaAs. We report results on stable neutral di-interstitial complex configurations in GaAs composed of both As and Ga atoms addressed by first-principles total-energy calculations based on density-functional theory
Availability note (English)
Available online at http://stacks.iop.org/0953-8984/16/8991/cm4_49_014.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/Additional details
Identifiers
- URL
- http://stacks.iop.org/0953-8984/16/8991/cm4_49_014.pdf; http://www.iop.org/;
- DOI
- 10.1088/0953-8984/16/49/014;
- PII
- S0953-8984(04)86123-X;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 16
- Journal Issue
- 49
- Journal Page Range
- p. 8991-9000
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36035645
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- AGGLOMERATION; ATOMS; DENSITY FUNCTIONAL METHOD; GALLIUM ARSENIDES; INTERSTITIALS; ION IMPLANTATION; SILICON
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CALCULATION METHODS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; GALLIUM COMPOUNDS; PNICTIDES; POINT DEFECTS; SEMIMETALS; VARIATIONAL METHODS