Published March 2008 | Version v1
Journal article Metadata-only

Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment

Creators

  • 1. Chinese Academy of Sciences, Beijing (China). Graduate School
  • 2. Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing (China)
  • 3. Chinese Academy of Sciences, Beijing (China). Inst. of Semiconductors
  • 4. Beijing Univ. of Aeronautics and Astronautics, Beijing (China). School of Science

Description

We study the structural defects in the SiOx film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples. [-SiO3]2- defects are the luminescence centres of the ultraviolet photoluminescence (PL) from the Fourier transform infrared spectroscopy and PL measurements. [-SiO3]2- is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000 degree C annealing, [-SiO3]2- defects still exist in the films. (authors)

Additional details

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
25
Journal Issue
3
Journal Page Range
p. 1034-1037
ISSN
0256-307X

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
40107060
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; ANNIHILATION; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ELECTRON CYCLOTRON-RESONANCE; EVOLUTION; FILMS; FOURIER TRANSFORM SPECTROMETERS; INFRARED SPECTRA; PHOTOLUMINESCENCE; PLASMA; POSITRONS; SILICON OXIDES; ULTRAVIOLET RADIATION
Descriptors DEC
ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; CHALCOGENIDES; CHEMICAL COATING; CRYSTAL STRUCTURE; CYCLOTRON RESONANCE; DEPOSITION; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; EMISSION; FERMIONS; HEAT TREATMENTS; INTERACTIONS; LEPTONS; LUMINESCENCE; MATTER; MEASURING INSTRUMENTS; OXIDES; OXYGEN COMPOUNDS; PARTICLE INTERACTIONS; PHOTON EMISSION; RADIATIONS; RESONANCE; SILICON COMPOUNDS; SPECTRA; SPECTROMETERS; SURFACE COATING

Optional Information

Notes
5 figs., 17 refs.