Published January 1982 | Version v1
Journal article Metadata-only

Negative magnetoresistance in Anderson localization of Si MOS inversion layers

Creators

  • 1. Gakushuin Women's Junior Coll., Tokyo (Japan)
  • 2. Gakushuin Univ., Tokyo (Japan). Dept. of Physics

Description

Inelastic scattering time tausub(epsilon) and the prefactor α are investigated in the wide carrier concentration range, 3 x 1016 to 6 x 1016 m-2. The temperature and energy dependence of tausub(epsilon) is expressed by tausub(infinity) T-sup(p)Esub(F). The prefactor has a transition at temperatures where tausub(epsilon) equals to the relaxation time due to the intervalley scattering. (orig.)

Additional details

Publishing Information

Journal Title
Surf. Sci.
Journal Volume
113
Journal Issue
1-3
Series
Surf. Sci.
Journal Page Range
505-509
ISSN
0039-6028

Conference

Title
4. International conference on electronic properties of two-dimensional systems.
Dates
24 - 28 Aug 1981.
Place
New London, NH, USA.

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
13681687
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
CARRIER DENSITY; ELECTRON-ELECTRON INTERACTIONS; EXPERIMENTAL DATA; IMPURITIES; INELASTIC SCATTERING; LAYERS; MAGNETORESISTANCE; RELAXATION; SILICON; TEMPERATURE DEPENDENCE; TIME DEPENDENCE
Descriptors DEC
DATA; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; INFORMATION; INTERACTIONS; LEPTON-LEPTON INTERACTIONS; NUMERICAL DATA; PARTICLE INTERACTIONS; PHYSICAL PROPERTIES; SCATTERING; SEMIMETALS