Alloy ordering in GaInP alloys: A cross-sectional scanning tunneling microscopy study
- 1. Department of Physics, The University of Texas, Austin, Texas 78712 (United States)
- 2. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Description
We present a cross-sectional scanning tunneling microscopy (XSTM) study of the spontaneous ordering of Ga0.48In0.52P and Ga0.52In0.48P grown on (001) GaAs substrates by molecular beam epitaxy (MBE) and organometallic vapor phase epitaxy (OMVPE), respectively. The (111)-type alloy ordering could be seen clearly in the OMVPE-grown alloy region. On the other hand, the MBE-grown region shows a very small degree of ordering as revealed by the STM. Most of the ordered region shows (InP)1(GaP)1-type ordering: alternating InP- and GaP-like (bar 111) planes. In addition to this type of ordering, we also observe another type of ordering consisting of two InP-like (bar 111) planes and one GaP-like (bar 111) plane that we call (InP)2(GaP)1-type ordering. copyright 1998 American Institute of Physics
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 73
- Journal Issue
- 14
- Journal Page Range
- p. 1979-1981
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 30001720
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRON MICROSCOPY; GALLIUM COMPOUNDS; GALLIUM PHOSPHIDES; INDIUM COMPOUNDS; INDIUM PHOSPHIDES; MOLECULAR BEAM EPITAXY; ORDER-DISORDER TRANSFORMATIONS; VAPOR PHASE EPITAXY
- Descriptors DEC
- CRYSTAL GROWTH METHODS; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MICROSCOPY; PHASE TRANSFORMATIONS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES