Published May 1, 2019 | Version v1
Journal article

On the applicability of elastic model to very thin crystalline layers

  • 1. Institute of Fundamental Technological Research, Polish Academy of Sciences, ul. Pawińskiego 5b, 02-106 Warsaw (Poland)
  • 2. Department of Physics, Aristotle University of Thessaloniki, GR 54124 Thessaloniki (Greece)

Description

Elastic model of continuum material is often used to simulate the relaxation of crystalline heterostructures. There are many reports on the successful application of the theory of elasticity to nano-sized crystalline heterostructures, even if the continuum condition for them is hardly fulfilled. On the other hand, progress in epitaxial growth allows for the preparation of stable ultra-thin layers with thickness of few monolayers. For such ultra-thin layers, results provided by continuum model and molecular statics/dynamics calculations become diverging. The key problem seems to be located at the modelling of the interface between layers, which is problematic in the continuum approach. By applying a step-wise substitutive compositional interfacial function, it is possible to obtain good agreement with molecular dynamics calculations, even for a single monolayer heterostructure. We propose another approach that uses composition as an extra parameter during finite element calculations, along with classical nodal displacements. Such an approach creates a chemo-elastic coupling that allows to interpolate the composition much like in the case of atomistic calculations. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/1190/1/012017

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
1190
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
1742-6596

Conference

Title
19. International Conference on Extended Defects in Semiconductors
Acronym
EDS2018
Dates
24-29 Jun 2018
Place
Thessaloniki (Greece)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53041236
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY; S74: ATOMIC AND MOLECULAR PHYSICS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COMPUTERIZED SIMULATION; ELASTICITY; EPITAXY; FINITE ELEMENT METHOD; INTERFACES; LAYERS; MOLECULAR DYNAMICS METHOD; NANOSTRUCTURES; RELAXATION; THIN FILMS
Descriptors DEC
CALCULATION METHODS; CRYSTAL GROWTH METHODS; FILMS; MATHEMATICAL SOLUTIONS; MECHANICAL PROPERTIES; NUMERICAL SOLUTION; SIMULATION