Decay kinetics of the defect-based visible luminescence in ZnO
Creators
- 1. Institute of Physics AS CR, Cukrovarnicka 10, 162 53 Prague (Czech Republic)
- 2. Institute of Applied Physics 'N.Carrara' (IFAC) of CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Firenze) (Italy)
- 3. IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980-8577 Sendai, Miyagi (Japan)
- 4. Department of Physics, Wake Forest University, Winston-Salem, NC 27109 (United States)
Description
Photoluminescence spectra and decays under pulsed N2 (337 nm) laser excitation were measured for hydrothermally grown bulk and liquid-phase epitaxy (LPE)-grown film ZnO samples within 9-300 K. Temperature dependence of integrated spectra over the exciton and visible spectral regions was evaluated using a model involving standard energy barrier processes. Decay curves measured within a broad time window (10 ns-1 ms) and with extreme signal/background ratio (five orders of magnitude) point to complex decay mechanism in which the exponential and inverse power-law processes can coexist. There is no straightforward interconnection between the observed temperature dependence of integrated visible photoluminescence intensity and its decay shape over the 9-300 K temperature interval.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jlumin.2009.04.047Additional details
Identifiers
- DOI
- 10.1016/j.jlumin.2009.04.047;
- PII
- S0022-2313(09)00235-X;
Publishing Information
- Journal Title
- Journal of Luminescence
- Journal Volume
- 129
- Journal Issue
- 12
- Journal Page Range
- p. 1564-1567
- ISSN
- 0022-2313
- CODEN
- JLUMA8
Conference
- Title
- 15. international conference on luminescence and optical spectroscopy of condensed matter
- Acronym
- ICL'08
- Dates
- 7-11 Jul 2008
- Place
- Lyon (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41114906
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL DEFECTS; CRYSTALS; EXCITATION; KINETICS; LIQUID PHASE EPITAXY; PHOTOLUMINESCENCE; SPECTRA; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; EMISSION; ENERGY-LEVEL TRANSITIONS; EPITAXY; FILMS; LUMINESCENCE; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; TEMPERATURE RANGE; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.