Published July 12, 1983
| Version v1
Journal article
High-frequency annealing of defects in ion-implanted MDS-structures
- 1. AN Ukrainskoj SSR, Kiev. Inst. Poluprovodnikov
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Высокочастотный отжиг дефектов в имплантированных MDP-структурах
Publishing Information
- Journal Title
- Pis'ma Zh. Tekh. Fiz.
- Journal Volume
- 9
- Journal Issue
- 13
- Series
- Pis'ma Zh. Tekh. Fiz.
- Journal Page Range
- 796-799
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 15044972
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; BORON IONS; ELECTRIC CONDUCTIVITY; FREQUENCY DEPENDENCE; ION IMPLANTATION; KEV RANGE 10-100; KHZ RANGE 100-1000; LOW TEMPERATURE; MHZ RANGE 01-100; MOS TRANSISTORS; N-TYPE CONDUCTORS; POINT DEFECTS; SILICON; SILICON OXIDES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ATOMIC IONS; CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY RANGE; FREQUENCY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; KHZ RANGE; MATERIALS; MHZ RANGE; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SEMIMETALS; SILICON COMPOUNDS; TRANSISTORS
Optional Information
- Notes
- Short note. For English translation see the journal Soviet Technical Physics Letters (USA).