Published November 1999
| Version v1
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About silicide production in silicon during implantation of barium and alkali ions
- 1. Tashkent State Technical Univ., Tashkent (Uzbekistan)
Description
no abstract available
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31011606.pdf
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Additional details
Additional titles
- Original title (Russian)
- О силицидообразовании происходящем при имплантации ионов Ба и щелочных элементов в кремний
Publishing Information
- Imprint Title
- Book of abstracts of the second Uzbekistan physical electronics conference
- Imprint Pagination
- 180 p.
- Journal Page Range
- p. 76
- Report number
- INIS-UZ--066
Conference
- Title
- 2. Uzbekistan physical electronics conference
- Dates
- 3-5 Nov 1999
- Place
- Tashkent (Uzbekistan)
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 31011606
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANNEALING; AUGER ELECTRON SPECTROSCOPY; BARIUM COMPOUNDS; BARIUM IONS; ION BEAMS; ION IMPLANTATION; KEV RANGE; LITHIUM IONS; PHOTOELECTRON SPECTROSCOPY; RUBIDIUM IONS; SILICIDES; SILICON; SURFACES
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; BEAMS; CHARGED PARTICLES; ELECTRON SPECTROSCOPY; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY