Dynamics of defect accumulation under fluctuation conditions of crystal irradiation

A study was made into the influence of fluctuations in radiation effect initiation rate in conjunction with fluctuation of radiation heating intensity for the crystals being irradiated on statistical parameters of its temperature and point defect density. It is shown that the fields of parameters exist at which crystal temperature and defect density variations are described by various accidental process, namely, by stationary process, nonstationary process with periodically varying average values and nonstationary nonperiodical process. The dynamics of appropriate accidental processes is determined depending on irradiation conditions are crystal properties. 6 refs., 3 figs