Published 2007 | Version v1
Miscellaneous Metadata-only

Study of atomic and electronic structure of atomic-pure Si(hhm) surfaces by slow electron diffraction, photoelectron spectroscopy and scanning tunnel microscopy

Creators

  • 1. Inst. Fiziki Tverdogo Tela RAN, Chernogolovka, Moskovskaya Obl. (Russian Federation)
  • 2. Groupe de Physique des Solides, Univ. Paris 7 et Paris 6, Campus Boucicaut, Paris (France)

Description

no abstract available

Part of:
The VI National conference on application of X-ray, synchrotron radiations, neutrons and electrons for material investigation (RSNEh 2007). The continuation of All-Union conferences on X-ray application for material investigation. Book of abstracts

Additional details

Additional titles

Original title (Russian)
Исследования атомной и электронной структуры атомно-чистых поверхностей Си(ххм) методами DMEh, FEhS и STM

Publishing Information

Publisher
IK RAN
Imprint Place
Moscow (Russian Federation)
Imprint Title
The VI National conference on application of X-ray, synchrotron radiations, neutrons and electrons for material investigation (RSNEh 2007). The continuation of All-Union conferences on X-ray application for material investigation. Book of abstracts
Imprint Pagination
650 p.
Journal Page Range
p. 220
Report number
INIS-RU--507

Conference

Title
6. National conference on application of X-ray, synchrotron radiations, neutrons and electrons for material investigation (RSNEh 2007)
Original Conference Title
VI Natsional'naya konferentsiya po primeneniyu rentgenovskogo, sinkhrotronnogo izluchenij, nejtronov i ehlektronov dlya issledovaniya materialov (RSNEh 2007)
Dates
12-17 Nov 2007
Place
Moscow (Russian Federation)

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
39072819
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; ELECTRONIC STRUCTURE; HEAT TREATMENTS; PHOTOELECTRON SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE PROPERTIES; SYNCHROTRON RADIATION
Descriptors DEC
BREMSSTRAHLUNG; COHERENT SCATTERING; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; MICROSCOPY; RADIATIONS; SCATTERING; SEMIMETALS; SPECTROSCOPY

Optional Information

Notes
Imprint:VI Natsional'naya konferentsiya po primeneniyu rentgenovskogo, sinkhrotronnogo izluchenij, nejtronov i ehlektronov dlya issledovaniya materialov (RSNEh 2007). Prodolzhenie Vsesoyuznykh soveshchanij po primeneniyu rentgenovskikh luchej dlya issledovaniya materialov. Tezisy dokladov