Published 2007 | Version v1
Journal article Metadata-only

Persistent photoconductivity effect on weak localization in AlxGa1-xAsySb1-y/InAs quantum wells

Creators

  • 1. Tokyo University of Science, Yamaguchi, San'yo-Onoda, Yamaguchi (Japan)
  • 2. Nanomaterials Microdevices Research Center, Osaka Inst. of Tech. (Japan)
  • 3. Muroran Institute of Technology, Muroran, Hokkaido (Japan)
  • 4. Asahi Kasei Corporation, Fuji, Shizuoka (Japan)

Description

Weak-field magnetoconductance (MC) caused by the weak localization (WL) in AlxGa1-xAsySb1-y/InAs quantum wells (QWs) has been studied by means of tuning the carrier density n via the positive and negative persistent photoconductivity effects in order to explore the origin of spin-orbit interaction (SOI). We have found the weak antilocalization (WAL) in extremely weak magnetic fields developing with increasing n. The MC has been fitted by taking account of the spin-Zeeman effect on the SOI arising from the spin splitting in asymmetric systems. The SO field (Bso) inferred has been found to be almost independent of n, thereby confirming the dominant role of the Rashba field as the cause of SOI in our InAs QWs. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200673285

Additional details

Identifiers

DOI
10.1002/pssc.200673285;

Publishing Information

Journal Title
Physica Status Solidi. C, Conferences
Journal Volume
4
Journal Issue
2
Journal Page Range
p. 329-331
ISSN
1610-1634

Conference

Title
International conference on superlattices, nano-structures and nano-devices (ICSNN-2006)
Dates
30 Jul - 4 Aug 2006
Place
Istanbul (Turkey)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
38025013
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM ARSENIDES; CARRIER DENSITY; CRYSTAL FIELD; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; INDIUM ARSENIDES; L-S COUPLING; MAGNETIC FIELDS; MAGNETORESISTANCE; PHOTOCONDUCTIVITY; QUANTUM WELLS; TEMPERATURE RANGE 0000-0013 K; ZEEMAN EFFECT
Descriptors DEC
ALUMINIUM COMPOUNDS; ANTIMONIDES; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; COUPLING; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INTERMEDIATE COUPLING; NANOSTRUCTURES; PHYSICAL PROPERTIES; PNICTIDES; TEMPERATURE RANGE

Optional Information

Notes
1 fig., 15 refs.. SICI: 1610-1634(200702)4:2<329::AID-PSSC200673285>3.0.TX;2-6