Determination of lattice displacements in Se implanted InP by RBS and PIXE channeling experiments

<1 0 0> InP single crystals were implanted with 600 keV Se at the critical temperature of 423 K with ion fluences ranging from 1013 to 1015 cm-2. The damaging of the In and P sublattices and the lattice location of the Se atoms have been studied by RBS and PIXE angular scan curves along the <1 0 0> and <1 1 0> directions. The critical angles and minimum yields have been extracted for each measurement. An attempt is made to determine the displacement distance of the constituent atoms from their lattice site