On the nature of excess atoms sintks in polycrystalline CdS films doped with copper and chlorine

The physico-chemical nature of sinks the knowledge of which permits to stabilize the parameters of CdS films is elucidated. The polycrystalline films have been obtained by CdS deposition in the process of thermal decomposition of chelate metalloorganic compounds into nonorienting substrates heated up to 560 K. The film thickness constituted 3 μm. It is shown that the aging process efficiency at the initial stage practically is independent of grain sizes. It is concluded that the aging of CdS films of 3 μm thickness at the initial stage is not caused by oxidation of their surfaces. The role of sinks near which the separation from a solid solution of excess at room temperature mobile donor defects (interstitial atoms) occurs is played not by grain boundaries but by some point nuclei in grain volume, possibly impurity atoms or their associates