Deep levels in InP by DLTS and TSCAP

This paper discusses electron and hole traps in the same p-InP:Zn substrate that were studied by DLTS and TSCAP methods prior to and after irradiation. Prior to irradiation, the DLTS measurements at a quiescent reverse bias of 3V, indicated the existence of three hole traps, H1 (EV + 0.56 eV), H2 (EV + 0.22 eV), H3 (EV + 0.14 eV) and one electron trap, E1(Ec-0.40 eV). The DLTS spectra at a quiescent forward bias of 0.2V, revealed only one interfacial trap, Hi (EV + 0.25 eV) which was different from the trap H2. From the bias dependence of the DLTS-data on the most prominent hole trap, the depth variation of trap parameters in surface barrier devices was established. After electron irradiation of the Yb/p-InP MIS device, the electron trap was annealed and four hole traps were observed. Trap data were also obtained on Au or Pd/oxide/n-InP bulk or MOCVD-epitaxial layers, and n+/p junctions grown by MOCVD