Temporal information encoding in dynamic memristive devices
Creators
- 1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States)
Description
We show temporal and frequency information can be effectively encoded in memristive devices with inherent short-term dynamics. Ag/Ag2S/Pd based memristive devices with low programming voltage (∼100 mV) were fabricated and tested. At weak programming conditions, the devices exhibit inherent decay due to spontaneous diffusion of the Ag atoms. When the devices were subjected to pulse train inputs emulating different spiking patterns, the switching probability distribution function diverges from the standard Poisson distribution and evolves according to the input pattern. The experimentally observed switching probability distributions and the associated cumulative probability functions can be well-explained using a model accounting for the short-term decay effects. Such devices offer an intriguing opportunity to directly encode neural signals for neural information storage and analysis
Additional details
Identifiers
- DOI
- 10.1063/1.4935220;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 107
- Journal Issue
- 19
- Journal Page Range
- p. 193101-193101.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47056043
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- DISTRIBUTION FUNCTIONS; ELECTRIC POTENTIAL; INFORMATION; PROBABILITY; SILVER SULFIDES
- Descriptors DEC
- CHALCOGENIDES; FUNCTIONS; SILVER COMPOUNDS; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC