On anisotropy of piezoresistance in irradiated n-type Ge with laminated distribution of impurity

Effect of laminated periodical inhomogeneities (LPI) on longitudinal piezoresistance rhosub(x)/rhosub(0) of n-Ge in γ-irradiation has been studied. It has been shown that the presence of LPI is of importance in manifestation of anisotropic properties in n-Ge crystals compensated by irradiation. It follows from sample initial impurity concentration and distribution in layers that radiation effect on rhosub(infinity)/rhosub(0) value becomes essential at doses of (7-8)x1016 sq/cm2. These doses create compensating impUrity concentration of (1.9x1013 cm-3), that approximately equals to minimum concentration of alloying impurity in layers