TiO2/ CNT hetero-structure with variable electron beam diameter suitable for nano lithography

We report fabrication of a novel TiO2/carbon nano tube based field emission device suitable for nano lithography and fabrication of transistor. The growth of carbon nano tubes is performed on silicon substrates using plasma-enhanced chemical vapor deposition method. The vertically grown carbon nano tubes are encapsulated by TiO2 using an atmospheric pressure chemical vapor deposition system. Field emission from the carbon nano tubes is realized by mechanical polishing of the prepared nano structure. The possibility of the application of such nano structures as a lithography tool with variable electron beam diameter was investigated. The obtained results show that spot size of less than 30 nm can be obtained by applying a proper voltage on TiO2 surrounding gate. Electrical measurements of the fabricated device confirm the capability of this nano structure for the fabrication of field emission based field effect transistor. By applying a voltage between the gate and the cathode electrode, the emission current from carbon nano tubes shows a significant drop, indicating proper control of gate on the emission current.