Signals from fluorescent materials on the surface of silicon micro-strip sensors
Creators
- 1. Institut für Physik, Humboldt-Universität zu Berlin (Germany)
- 2. Deutsches Elektronen-Synchrotron (Germany)
- 3. SUPA School of Physics and Astronomy, University of Glasgow (United Kingdom)
- 4. Cruz Institute for Particle Physics (SCIPP), University of California (United States)
Description
For the High-Luminosity Upgrade of the Large Hadron Collider at CERN, the ATLAS Inner Detector will be replaced with a new, all-silicon tracker (ITk). In order to minimise the amount of material in the ITk, circuit boards with readout electronics will be glued onto the active area of the sensor. Several adhesives, investigated to be used for the construction of detector modules, were found to become fluorescent when exposed to UV light. These adhesives could become a light source in the high-radiation environment of the ATLAS detector. The effect of fluorescent material covering the sensor surface in a high-radiation environment has been studied for a silicon micro-strip sensor using a micro-focused X-ray beam. By positioning the beam parallel to the sensor surface and pointing it both inside the sensor and above the sensor surface inside the deposited glue, the sensor responses from direct hits and fluorescence can be compared with high precision. This contribution presents a setup to study the susceptibility of silicon strip sensors to light contamination from fluorescent materials and shows their impact on the noise and fake signal rate of a sensor operated in a high-radiation environment.
Additional details
Identifiers
- DOI
- 10.1016/j.nima.2018.07.073;
- PII
- S0168900218309094;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 924
- Journal Page Range
- p. 125-127
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 11. International Hiroshima Symposium on Development and Application of Semiconductor Tracking Detectors
- Acronym
- HTSD11
- Dates
- 10-15 Dec 2017
- Place
- Okinawa (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 55021235
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ATLAS DETECTOR; CERN LHC; FLUORESCENCE; LUMINOSITY; READOUT SYSTEMS; SENSORS; SIGNALS; SILICON; SURFACES; ULTRAVIOLET RADIATION; X RADIATION
- Descriptors DEC
- ACCELERATORS; CYCLIC ACCELERATORS; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; IONIZING RADIATIONS; LUMINESCENCE; MEASURING INSTRUMENTS; OPTICAL PROPERTIES; PHOTON EMISSION; PHYSICAL PROPERTIES; RADIATION DETECTORS; RADIATIONS; SEMIMETALS; STORAGE RINGS; SYNCHROTRONS
Optional Information
- Copyright
- Copyright (c) 2018 Elsevier B.V. All rights reserved.