Published 1990 | Version v1
Report Restricted

Quantum Hall samples prepared by helium-ion implantation

Creators

  • 1. Danish Inst. of Fundamental Metrology, Lyngby (Denmark)

Description

We have produced GaAs/GaAlAs heterostructure based quantum Hall samples with a wide range of electron mobilities using ion implantation. The purpose has been to optimize the samples for use in metrology. We have in particular studied the critical current and the non-ohmic behavior of our samples in the vicinity of a quantum Hall plateau. (orig.)

Availability note (English)

MF available from INIS under the Report Number.

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Additional details

Publishing Information

Imprint Pagination
3 p.
Report number
KU-HCOE-FL2-R--90-5

INIS

Country of Publication
Denmark
Country of Input or Organization
Denmark
INIS RN
21060353
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM ARSENIDES; CRITICAL CURRENT; ELECTRON MOBILITY; GALLIUM ARSENIDES; HALL EFFECT; HELIUM IONS; INTERFACES; ION IMPLANTATION; NONLINEAR PROBLEMS; QUANTIZATION
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; CURRENTS; ELECTRIC CURRENTS; GALLIUM COMPOUNDS; IONS; MOBILITY; PARTICLE MOBILITY; PNICTIDES