Correlation between the structure modification and conductivity of 3 MeV Si ion-irradiated polyimide

The surface modification of the polyimide (PI/Kapton) films was carried out by 3 MeV Si+ implantation to fluences ranging from 1x1012 to 1.25x1015 ions/cm2. Fourier transform infrared (FTIR), Raman and ultraviolet/visible (UV/Vis) spectroscopes were employed to investigate the chemical degradation of function groups in the irradiated layer. FTIR results show that the absorbance of typical function group decreases exponentially as a function of fluence. The damage cross-section of typical bonds of PI was evaluated from the FTIR spectra. Raman analysis shows the absorbed dose for destruction of all function groups is above 218 MGy. The red shifting of the absorption edge from UV to visible reveals the band gap closing which results from increase of the cluster size. The production efficiency of the chromophores was discussed according to UV/Vis analysis. Irradiation dramatically enhances the electrical conductivity and the sheet resistivity in our experiment descends nearly 10 orders of magnitude compared with its intrinsic value