Visible wavelength (6470 A) GaxIn1-xP/GaAs0.66P0.34 quantum wire heterostructures
- 1. Department of Electrical and Computer Engineering and Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
- 2. Optoelectronics Division, Hewlett-Packard, San Jose, California 95131 (United States)
Description
Utilizing the strain-induced lateral-layer ordering (SILO) process, we have grown GaxIn1-xP multiple quantum wires (MQWR) on ternary GaAs0.66P0.34 substrates using a modified strain-balance mechanism. The resulting [110] lateral modulation occurred with a periodicity of ∼300 A. Two dimensions of quantum confinement were obtained by surrounding the laterally confined GaxIn1-xP regions by layers of higher-energy-gap Al0.15Ga0.53In0.32P in the growth direction. A redshift in the photoluminescence emission was observed as the growth temperature was increased attributed to a stronger lateral composition modulation at the higher growth temperatures. Based on the modified strain-balance mechanism, light-emitting diodes with the GaxIn1-xP MQWR active region were fabricated using the SILO process. Strongly TE-polarized room-temperature electroluminescence from these devices was observed at 6470 A. copyright 1996 American Institute of Physics
Additional details
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 80
- Journal Issue
- 12
- Journal Page Range
- p. 7124-7129.
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 28012538
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTROLUMINESCENCE; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; HETEROJUNCTIONS; INDIUM PHOSPHIDES; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; STRAINS; VISIBLE RADIATION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELECTROMAGNETIC RADIATION; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS