Published September 2016
| Version v1
Journal article
Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates
Creators
- 1. Vozonezh State University (Russian Federation)
- 2. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Description
Nanostructured aluminum-nitride films are formed by reactive ion-plasma sputtering onto GaAs substrates with different orientations. The properties of the films are studied via structural analysis, atomic force microscopy, and infrared and visible–ultraviolet spectroscopy. The aluminum-nitride films can have a refractive index in the range of 1.6–4.0 at a wavelength of ~250 nm and an optical band gap of ~5 eV. It is shown that the morphology, surface composition, and optical characteristics of AlN/GaAs heterophase systems can be controlled using misoriented GaAs substrates.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 50
- Journal Issue
- 9
- Journal Page Range
- p. 1261-1272
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48098356
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION SPECTROSCOPY; ALUMINIUM; ALUMINIUM NITRIDES; ATOMIC FORCE MICROSCOPY; ENERGY GAP; GALLIUM ARSENIDES; INFRARED SPECTRA; MORPHOLOGY; NANOSTRUCTURES; ORIENTATION; PLASMA; REFRACTIVE INDEX; SPUTTERING; SUBSTRATES; THIN FILMS; ULTRAVIOLET RADIATION; ULTRAVIOLET SPECTRA; VISIBLE SPECTRA
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; ELECTROMAGNETIC RADIATION; ELEMENTS; FILMS; GALLIUM COMPOUNDS; METALS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; SPECTRA; SPECTROSCOPY
Optional Information
- Copyright
- Copyright (c) 2016 Pleiades Publishing, Ltd.