Published 1995
| Version v1
Report
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Radiation-stimulated diffusion of impurities at single crystals of silicon and diamond
Creators
- 1. Joint Inst. for Nuclear Research, Dubna (Russian Federation). Lab. of Nuclear Reactions
- 2. Belorusskij Gosudarstvennyj Univ., Minsk (Belarus)
Description
The processes of migration of impurity implanted at the surface of silicon and diamond single crystals under post irradiation annealing are studied. The annealing temperature was elected under the conditions of relatively high coefficients of impurity migration and has been low than temperature of recrystallization of damaged single crystal. The mechanisms of this phenomenon are discussed. (author). 11 refs., 7 figs
Availability note (English)
MF available from INIS under the Report Number.Files
27009828.pdf
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Additional details
Additional titles
- Original title (Russian)
- Радиационно-стимулированная диффузия примесей в монокристаллах кремния и алмаза
Publishing Information
- Imprint Pagination
- 12 p.
- Report number
- JINR-R--14-95-144
INIS
- Country of Publication
- Joint Institute for Nuclear Research (JINR)
- Country of Input or Organization
- Joint Institute for Nuclear Research (JINR)
- INIS RN
- 27009828
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- DIAMONDS; DIFFUSION; EXPERIMENTAL DATA; ION BEAMS; ION IMPLANTATION; KEV RANGE 10-100; KEV RANGE 100-1000; MEV RANGE 10-100; MEV RANGE 100-1000; MONOCRYSTALS; PHYSICAL RADIATION EFFECTS; SILICON; TEMPERATURE RANGE 1000-4000 K
- Descriptors DEC
- BEAMS; CARBON; CRYSTALS; DATA; ELEMENTS; ENERGY RANGE; INFORMATION; KEV RANGE; MEV RANGE; MINERALS; NONMETALS; NUMERICAL DATA; RADIATION EFFECTS; SEMIMETALS; TEMPERATURE RANGE