Published December 1, 2008
| Version v1
Journal article
Quantum resistance metrology in graphene
Creators
- 1. High Field Magnet Laboratory, Institute for Molecules and Materials, Radboud University Nijmegen, Toernooiveld 7, 6525 ED Nijmegen (Netherlands)
- 2. NMi Van Swinden Laboratorium BV, Thijsseweg 11, 2629 JA Delft (Netherlands)
- 3. Department of Physics, University of Manchester, M13 9PL Manchester (United Kingdom)
Description
We performed a metrological characterization of the quantum Hall resistance in a 1 μm wide graphene Hall bar. The longitudinal resistivity in the center of the ν=±2 quantum Hall plateaus vanishes within the measurement noise of 20 mΩ up to 2 μA. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5 μA current) equal to that in conventional semiconductors. The principal limitation of the present experiments is the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied
Additional details
Identifiers
- DOI
- 10.1063/1.3043426;
- arXiv
- arXiv:0810.4064v1;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 93
- Journal Issue
- 22
- Journal Page Range
- p. 222109-222109.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40051175
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CARBON; ELECTRIC POTENTIAL; HALL EFFECT; HEATING; NANOSTRUCTURES; NOISE; QUANTIZATION; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ELEMENTS; MATERIALS; NONMETALS
Optional Information
- Notes
- (c) 2008 American Institute of Physics