Published December 1, 2008 | Version v1
Journal article

Quantum resistance metrology in graphene

  • 1. High Field Magnet Laboratory, Institute for Molecules and Materials, Radboud University Nijmegen, Toernooiveld 7, 6525 ED Nijmegen (Netherlands)
  • 2. NMi Van Swinden Laboratorium BV, Thijsseweg 11, 2629 JA Delft (Netherlands)
  • 3. Department of Physics, University of Manchester, M13 9PL Manchester (United Kingdom)

Description

We performed a metrological characterization of the quantum Hall resistance in a 1 μm wide graphene Hall bar. The longitudinal resistivity in the center of the ν=±2 quantum Hall plateaus vanishes within the measurement noise of 20 mΩ up to 2 μA. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5 μA current) equal to that in conventional semiconductors. The principal limitation of the present experiments is the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
93
Journal Issue
22
Journal Page Range
p. 222109-222109.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40051175
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CARBON; ELECTRIC POTENTIAL; HALL EFFECT; HEATING; NANOSTRUCTURES; NOISE; QUANTIZATION; SEMICONDUCTOR MATERIALS
Descriptors DEC
ELEMENTS; MATERIALS; NONMETALS

Optional Information

Notes
(c) 2008 American Institute of Physics