Published October 1974 | Version v1
Book Metadata-only

Mathematical models of ion implantation

Creators

  • 1. CEA Centre d'Etudes Nucleaires de Grenoble, 38 (France). Lab. d'Electronique et de Technologie de l'Informatique

Description

For several years, ion implantation in semiconductors have allowed remarkable results to be obtained, especially in M.O.S. transistor field. Tables for defining implantation conditions are commonly used in order to precise the physical parameters involved in implanted circuits fabrication. Hypotheses involved in calculating impurity profiles and energy loss are given

Abstract (French)

Depuis plusieurs annees, l'implantation des ions dans un semi-conducteur a permis d'obtenir des resultats spectaculaires, notamment dans le domaine des transistors M.O.S. Afin de bien preciser les parametres physiques intervenant lors de la fabrication de circuits implantes, il est courant de faire appel a des tables permettant de definir les conditions d'implantation. On se propose de voir ici quelles sont les hypotheses intervenant dans le calcul des profils des impuretes implantees et d'energie deposee

Additional details

Additional titles

Original title (French)
Modeles mathematiques de l'implantation ionique

Publishing Information

Publisher
Societe Francaise du Vide.
Imprint Place
Paris, France
Imprint Title
Electron and ion beam processes applications. 4. International congress AVISEM 74. Toulouse, October 8-11, 1974
Imprint Pagination
p. 321-328.

Conference

Title
4. International congress AVISEM 74. Application of electronic and ionic processes.
Dates
08 Oct 1974.
Place
Toulouse, France.

INIS

Country of Publication
France
Country of Input or Organization
France
INIS RN
7238319
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHARGED-PARTICLE TRANSPORT; DEPTH; ENERGY LOSSES; ION IMPLANTATION; MATHEMATICAL MODELS; PHYSICAL RADIATION EFFECTS; SPATIAL DISTRIBUTION
Descriptors DEC
DIMENSIONS; DISTRIBUTION; RADIATION EFFECTS; RADIATION TRANSPORT

Optional Information

Notes
Imprint:Supplement to the journal Le Vide les Couches Minces no. 171.;Application des processus electroniques et ioniques. 4. Congres international AVISEM 74. Toulouse, 8-11 Octobre 1974.