Published May 6, 2002
| Version v1
Journal article
A simple, effective tight-binding parametrization for Si-Ge interactions on Si(001)
Creators
- 1. Department of Physics and Astronomy, University College London, London (United Kingdom)
Description
We describe a simple yet extremely effective tight-binding parametrization for Ge-Ge and Si-Ge interactions in near-tetrahedral bonding situations, in particular on the (001) surface of Si and Ge, and present results of tests on various systems (including ad-dimers of Ge and the square structure found during gas-source growth). (author)
Availability note (English)
Available online at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-6448X) http://www.iop.org/Additional details
Identifiers
- URL
- http://www.iop.org/;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 14
- Journal Issue
- 17
- Journal Page Range
- p. 4527-4532
- ISSN
- 0953-8984
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 33022862
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHEMICAL BONDS; DIMERS; GERMANIUM; MONOCRYSTALS; SILICON; SURFACE AREA
- Descriptors DEC
- CRYSTALS; ELEMENTS; METALS; SEMIMETALS; SURFACE PROPERTIES