Published September 8, 1986
| Version v1
Journal article
Formation of a new ordered structure of CaF2/Si(111) by ultraviolet irradiation
- 1. IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
Description
A new ultraviolet-irradiation--induced ordered structure is observed for CaF2/Si(111) by angle-resolved photoelectron spectroscopy. The new structure can be viewed as an ordered array of surface F centers and is characterized by a half-filled band extending 0.5 eV below the Fermi level
Additional details
Publishing Information
- Journal Title
- Phys. Rev. Lett.
- Journal Volume
- 57
- Journal Issue
- 10
- Series
- Phys. Rev. Lett.
- Journal Page Range
- 1247-1250
- ISSN
- 0031-9007
- CODEN
- PRLTA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 18017983
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- CALCIUM FLUORIDES; CRYSTAL STRUCTURE; EXPERIMENTAL DATA; F CENTERS; FERMI LEVEL; PHOTOELECTRON SPECTROSCOPY; PHYSICAL RADIATION EFFECTS; SILICON; SURFACE PROPERTIES; THIN FILMS; ULTRAVIOLET RADIATION
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CALCIUM COMPOUNDS; CALCIUM HALIDES; COLOR CENTERS; CRYSTAL DEFECTS; DATA; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; ENERGY LEVELS; FILMS; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; INFORMATION; NUMERICAL DATA; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; SEMIMETALS; SPECTROSCOPY; VACANCIES