Published September 1, 2019 | Version v1
Journal article

The evolution of the crystallinity depending on the annealing temperature in the CTS films obtained by spray pyrolysis

  • 1. Research Centre of Semiconductor Devices, Science Institute. Meritorious University Autonomous of Puebla, 14th south, Col. San Manuel, C.P. 72750, Puebla (Mexico)
  • 2. Electronics Faculty. Meritorious University Autonomous of Puebla, 14th south, Col. San Manuel, C.P. 72750, Puebla (Mexico)
  • 3. National Institute of Astrophysics, Optics and Electronics. Luis Enrique Erro 1, Cholula, Puebla. Mexico (Mexico)

Description

We report the effect of temperature annealing with nitrogen atmosphere in the CTS film deposited by spray pyrolysis, and their evolution in crystallinity, as well as the contribution in the optical parameters, such as optical absorption coefficient, band gap, and the contribution in morphology. We could obtain the Cu4Sn7S16 and Cu2SnS3 proving with the XRD diffractograms and Raman analysis. The films showed a good crystallinity, and crystallite size between 11.9 nm and 18.1 nm. The optical absorption coefficient is ∼105 cm−1 and the band gap is between 0.86 eV and 0.95 eV. The band gap showed dependence on CTS phase. The morphology of the samples is like petals. The sample that has the best characteristics to be applied as absorber film on photovoltaic devices is the sample C10T1-245 (0.1 M (SnCl2 · 2H2O), 0.1 M (CuCl2 · 2H2O), 0.3 M (CS(NH2)2) with temperature annealing of 245 °C. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/2053-1591/ab2fbb

Additional details

Identifiers

Publishing Information

Journal Title
Materials Research Express (Online)
Journal Volume
6
Journal Issue
9
Journal Page Range
[11 p.]
ISSN
2053-1591