Electron irradiation effect on the surface composition of Ar+ ion bombarded Si-nitride and Si-oxynitride

Auger electron spectroscopy (AES) and electron energy loss spectroscopy (ELS) have been used to study the surface composition of the Si-nitride and Si-oxynidtride prepared by low pressure chemical vapor deposition. Ion bombardment has been shown to result in appearance of the ''free'' silicon on the surface. Electron irradiation of the samples preliminary bombarded by Ar+ ions has led to disappearance of the ''free'' silicon. This process is assumed to be connected with electron stimulated desorption of the ''free'' silicon. (author)