Recombination in narrow-gap semiconductors

This review is intended to be an introduction to the recombination mechanisms important for narrow-gap semiconductors. The study of recombination mechanisms gives information on the various interactions the free carriers happen to meet in crystals. On the other hand recombination mechanisms are limiting the performance of all the modern solid state electronic devices. It was recently observed that the dominant recombination processes in narrow-gap semiconductors are different from those important for the classical semiconductors. Due to the narrow band gap the intrinsic carrier density is rather large and in addition the band gap energy is of the same order of magnitude as the energy of elementary excitations as LO-phonons or plasmons, and typical cyclotron-resonance energies. Accordingly processes as the Auger effect or recombination by emitting single phonons or single plasmons become highly probable. These mechanisms have been observed recently and also a new magnetic quantum effect was discovered. The new processes have proved to be important for devices like infrared detectors and infrared solid state lasers, but revealed also some fundamental properties of semiconductors. (orig.)