Published February 4, 2009
| Version v1
Journal article
Half-metallicity at the Heusler alloy Co2Cr0.5Fe0.5Al(001) surface and its interface with GaAs(001)
- 1. Department of Physics, Isfahan University of Technology, Isfahan 84156 (Iran, Islamic Republic of)
Description
Electronic and magnetic properties of the Heusler alloy Co2Cr0.5Fe0.5Al(001) surfaces and its interfaces with GaAs(001) are studied within the framework of density functional theory by using the plane-wave pseudopotential approach. The phase diagram obtained by ab initio atomistic thermodynamics shows that the CrAl surface is the most stable (001) termination of this Heusler alloy. We discuss that, at the ideal surfaces and interfaces with GaAs, half-metallicity of the alloy is lost, although the CrAl surface keeps high spin polarization. The energy band profile of the stable interface is investigated and a negative p Schottky barrier of -0.78 eV is obtained for this system.
Availability note (English)
Available from http://dx.doi.org/10.1088/0953-8984/21/5/055002Additional details
Identifiers
- DOI
- 10.1088/0953-8984/21/5/055002;
- PII
- S0953-8984(09)80814-X;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 21
- Journal Issue
- 5
- Journal Page Range
- [7 p.]
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41032506
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM ALLOYS; CHROMIUM ALLOYS; COBALT ALLOYS; DENSITY FUNCTIONAL METHOD; ELECTRICAL PROPERTIES; GALLIUM ARSENIDES; HEUSLER ALLOYS; INTERFACES; IRON ALLOYS; MAGNETIC PROPERTIES; PHASE DIAGRAMS; POLARIZATION; SCHOTTKY BARRIER DIODES; SPIN ORIENTATION; SURFACES; THERMODYNAMICS; WAVE PROPAGATION
- Descriptors DEC
- ALLOYS; ALUMINIUM ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; CALCULATION METHODS; COPPER ALLOYS; COPPER BASE ALLOYS; CORROSION RESISTANT ALLOYS; DIAGRAMS; GALLIUM COMPOUNDS; INFORMATION; MANGANESE ALLOYS; ORIENTATION; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TRANSITION ELEMENT ALLOYS; VARIATIONAL METHODS