Analytical model for computer simulation of impurity depth profiles produced by ion implantation

Modified analytical model for computer simulation necessary for determination of implanted impurity value within a broad scale of incident ion energies is proposed. It is shown that calculation of standard multiplier may be carried out with high accuracy thorough application of analytical ratio between impurity distribution asymmetry and its maximum. This conclusion is proved by comparison of calculation results with experimental data on implantation of boron into silicon