Published April 2009
| Version v1
Journal article
Photo-sensitive p-n homojunctions based on Pb1-xSnxSe epitaxial films
Description
In the present work results of research of features of growth and structure of Pb1-xSnxSe epitaxial films grown on BaF2 substrates by the method of condensation of molecular beams in vacuum 104 Pa have been submitted. By the application of an additional compensating source of Se vapors during growth, optimum conditions of reception structurally perfect Pb1-xSnxSe films of p- and n- type conductivity with a set of electrophysical parameters have been determined. On the basis of the films received in a uniform work cycle p-n homojunctions photosensitive in IR-region of the spectrum have been created. (author)
Additional details
Publishing Information
- Journal Title
- Fizika (Baku)
- Journal Volume
- 15
- Journal Issue
- 2
- Journal Page Range
- p. 55-57
- ISSN
- 1028-8546
INIS
- Country of Publication
- Azerbaijan
- Country of Input or Organization
- Azerbaijan
- INIS RN
- 45037438
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- DATA ANALYSIS; EPITAXY; FILMS; HOMOJUNCTIONS; INFRARED RADIATION; MOLECULAR BEAMS; NUMERICAL DATA; PHOTOSENSITIVITY; PHYSICAL PROPERTIES; SAMPLE PREPARATION; STRUCTURE FACTORS; TEMPERATURE COEFFICIENT; VACUUM STATES
- Descriptors DEC
- BEAMS; CRYSTAL GROWTH METHODS; DATA; DIMENSIONLESS NUMBERS; ELECTROMAGNETIC RADIATION; INFORMATION; RADIATIONS; REACTIVITY COEFFICIENTS; SEMICONDUCTOR JUNCTIONS; SENSITIVITY
Optional Information
- Notes
- 4 figs, 6 refs
- Funding organization
- Azerbaijan National Academy of Sciences, Institute of Physics, Department of Physical, Mathematical and Technical Sciences Baku (Azerbaijan)